**Research Topic**:
_Prediction of III-V semiconductor material properties using density functional theory (DFT) methods_The main purpose of this work is to estimate transport parameters over a wide range of III-V semiconductor alloy compositions directly from simulations. The work should employ novel methods to get this data through first-principles ab-initio calculations together with solving the Boltzmann transport equation. The resulting material parameter models will then ultimately be used in predictive semiconductor device simulations of III-V semiconductor detectors and emitters.The Institute of Microelectronics at the TU Wien in Vienna has a research group of high international renown, which will support the PhD thesis from a theoretical point of view. The thesis will also include the calibration of the employed simulation methods using experimental data from an III-V detector development project currently running at ams-OSRAM. The thesis will be supervised by a technical fellow at ams-OSRAM and by an academic supervisor of TU Wien.**Desired Skills and Experiences**For this position, considerable interest and existing in-depth knowledge in one or more of the following areas are advantageous to complement our team:
- Master of PhD Degree in Computational Science, Electrical Engineering, Physics, Applied Mathematics, or equivalent studies- Profound knowledge of C++ under GNU/Linux- Experience in utilizing third-party (scientific) libraries- Team player, eager, and reliable- Proactive and self-reliant- Good knowledge of written and spoken English- Experience with DFT tools and methods is a plus**Desired Start**Immediately. The position will remain open until filled.**Salary****Application Material****Application Deadline**There is no particular deadline for applying, and it will be assigned on a first-come-first-serve basis.